Effects of Te doping on ordering and antiphase boundaries in GaInP
Identifieur interne : 012427 ( Main/Repository ); précédent : 012426; suivant : 012428Effects of Te doping on ordering and antiphase boundaries in GaInP
Auteurs : RBID : Pascal:00-0179417Descripteurs français
- Pascal (Inist)
English descriptors
- KwdEn :
Abstract
Transmission electron microscope (TEM) and transmission electron diffraction studies have been performed to investigate the effects of Te doping on ordering and antiphase boundaries (APBs) in organometallic vapor phase epitaxial Ga0.5In0.5P layers grown on (001) GaAs singular and vicinal substrates at 670°C. TEM results show that the behavior of APBs for the singular samples differs from that of the vicinal samples. The density of APBs in the vicinal samples is increased by roughly a factor of 2, whilst that of the singular samples is slightly increased, as the Te concentration increases. APBs are inclined 10-57° from the (001) growth surface. As for the singular samples, the angle seems to remain virtually unchanged with increasing doping level. However, for the vicinal samples, the angle decreases significantly with increasing concentration. A simple model is presented to explain the dopant concentration dependence of the behavior of APBs in the ordered GaInP. © 2000 Publication Board, Japanese Journal of Applied Physics.
Links toward previous steps (curation, corpus...)
- to stream Main, to step Corpus: 013647
Links to Exploration step
Pascal:00-0179417Le document en format XML
<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Effects of Te doping on ordering and antiphase boundaries in GaInP</title><author><name sortKey="Choi, Chel Jong" uniqKey="Choi C">Chel-Jong Choi</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Materials Science and Engineering Kwangju Institute of Science and Technology (K-JIST), Kwangju, 500-712, Korea</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country xml:lang="fr">Corée du Sud</country><wicri:regionArea>Department of Materials Science and Engineering Kwangju Institute of Science and Technology (K-JIST), Kwangju, 500-712</wicri:regionArea><wicri:noRegion>500-712</wicri:noRegion></affiliation></author><author><name sortKey="Spirydon, R" uniqKey="Spirydon R">R. Spirydon</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Materials Science and Engineering Kwangju Institute of Science and Technology (K-JIST), Kwangju, 500-712, Korea</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country xml:lang="fr">Corée du Sud</country><wicri:regionArea>Department of Materials Science and Engineering Kwangju Institute of Science and Technology (K-JIST), Kwangju, 500-712</wicri:regionArea><wicri:noRegion>500-712</wicri:noRegion></affiliation></author><author><name sortKey="Seong, T Y" uniqKey="Seong T">T.-Y. Seong</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Materials Science and Engineering Kwangju Institute of Science and Technology (K-JIST), Kwangju, 500-712, Korea</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country xml:lang="fr">Corée du Sud</country><wicri:regionArea>Department of Materials Science and Engineering Kwangju Institute of Science and Technology (K-JIST), Kwangju, 500-712</wicri:regionArea><wicri:noRegion>500-712</wicri:noRegion></affiliation></author><author><name sortKey="Lee, S H" uniqKey="Lee S">S. H. Lee</name><affiliation wicri:level="2"><inist:fA14 i1="02"><s1>Department of Materials Science and Engineering, University of Utah, Salt Lake City, Utah 84112</s1><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Utah</region></placeName><wicri:cityArea>Department of Materials Science and Engineering, University of Utah, Salt Lake City</wicri:cityArea></affiliation></author><author><name sortKey="Stringfellow, G B" uniqKey="Stringfellow G">G. B. Stringfellow</name><affiliation wicri:level="2"><inist:fA14 i1="02"><s1>Department of Materials Science and Engineering, University of Utah, Salt Lake City, Utah 84112</s1><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Utah</region></placeName><wicri:cityArea>Department of Materials Science and Engineering, University of Utah, Salt Lake City</wicri:cityArea></affiliation></author></titleStmt><publicationStmt><idno type="inist">00-0179417</idno><date when="2000-02">2000-02</date><idno type="stanalyst">PASCAL 00-0179417 AIP</idno><idno type="RBID">Pascal:00-0179417</idno><idno type="wicri:Area/Main/Corpus">013647</idno><idno type="wicri:Area/Main/Repository">012427</idno></publicationStmt><seriesStmt><idno type="ISSN">0021-4922</idno><title level="j" type="abbreviated">Jpn. J. Appl. Phys., Part I</title><title level="j" type="main">Japanese Journal of Applied Physics, Part I : Regular papers, short notes & review papers</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Anti-phase boundaries</term><term>Epitaxial layers</term><term>Experimental study</term><term>Gallium compounds</term><term>Indium compounds</term><term>Order-disorder transformations</term><term>Phosphorus compounds</term><term>Semiconductor doping</term><term>Tellurium</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>6855L</term><term>Etude expérimentale</term><term>Couche épitaxique</term><term>Gallium composé</term><term>Indium composé</term><term>Phosphore composé</term><term>Dopage semiconducteur</term><term>Tellure</term><term>Transformation ordre désordre</term><term>Joint antiphase</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">Transmission electron microscope (TEM) and transmission electron diffraction studies have been performed to investigate the effects of Te doping on ordering and antiphase boundaries (APBs) in organometallic vapor phase epitaxial Ga<sub>0.5</sub>In<sub>0.5</sub>P layers grown on (001) GaAs singular and vicinal substrates at 670°C. TEM results show that the behavior of APBs for the singular samples differs from that of the vicinal samples. The density of APBs in the vicinal samples is increased by roughly a factor of 2, whilst that of the singular samples is slightly increased, as the Te concentration increases. APBs are inclined 10-57° from the (001) growth surface. As for the singular samples, the angle seems to remain virtually unchanged with increasing doping level. However, for the vicinal samples, the angle decreases significantly with increasing concentration. A simple model is presented to explain the dopant concentration dependence of the behavior of APBs in the ordered GaInP. © 2000 Publication Board, Japanese Journal of Applied Physics.</div> </front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0021-4922</s0></fA01><fA02 i1="01"><s0>JAPNDE</s0></fA02><fA03 i2="1"><s0>Jpn. J. Appl. Phys., Part I</s0></fA03><fA05><s2>39</s2></fA05><fA06><s2>2A</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Effects of Te doping on ordering and antiphase boundaries in GaInP</s1></fA08><fA11 i1="01" i2="1"><s1>CHOI (Chel-Jong)</s1></fA11><fA11 i1="02" i2="1"><s1>SPIRYDON (R.)</s1></fA11><fA11 i1="03" i2="1"><s1>SEONG (T.-Y.)</s1></fA11><fA11 i1="04" i2="1"><s1>LEE (S. H.)</s1></fA11><fA11 i1="05" i2="1"><s1>STRINGFELLOW (G. B.)</s1></fA11><fA14 i1="01"><s1>Department of Materials Science and Engineering Kwangju Institute of Science and Technology (K-JIST), Kwangju, 500-712, Korea</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></fA14><fA14 i1="02"><s1>Department of Materials Science and Engineering, University of Utah, Salt Lake City, Utah 84112</s1><sZ>4 aut.</sZ><sZ>5 aut.</sZ></fA14><fA20><s1>402-406</s1></fA20><fA21><s1>2000-02</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>9959</s2></fA43><fA44><s0>8100</s0><s1>© 2000 American Institute of Physics. All rights reserved.</s1></fA44><fA47 i1="01" i2="1"><s0>00-0179417</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Japanese Journal of Applied Physics, Part I : Regular papers, short notes & review papers</s0></fA64><fA66 i1="01"><s0>USA</s0></fA66><fC01 i1="01" l="ENG"><s0>Transmission electron microscope (TEM) and transmission electron diffraction studies have been performed to investigate the effects of Te doping on ordering and antiphase boundaries (APBs) in organometallic vapor phase epitaxial Ga<sub>0.5</sub>In<sub>0.5</sub>P layers grown on (001) GaAs singular and vicinal substrates at 670°C. TEM results show that the behavior of APBs for the singular samples differs from that of the vicinal samples. The density of APBs in the vicinal samples is increased by roughly a factor of 2, whilst that of the singular samples is slightly increased, as the Te concentration increases. APBs are inclined 10-57° from the (001) growth surface. As for the singular samples, the angle seems to remain virtually unchanged with increasing doping level. However, for the vicinal samples, the angle decreases significantly with increasing concentration. A simple model is presented to explain the dopant concentration dependence of the behavior of APBs in the ordered GaInP. © 2000 Publication Board, Japanese Journal of Applied Physics.</s0> </fC01><fC02 i1="01" i2="3"><s0>001B60H55L</s0></fC02><fC03 i1="01" i2="3" l="FRE"><s0>6855L</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="02" i2="3" l="FRE"><s0>Etude expérimentale</s0></fC03><fC03 i1="02" i2="3" l="ENG"><s0>Experimental study</s0></fC03><fC03 i1="03" i2="3" l="FRE"><s0>Couche épitaxique</s0></fC03><fC03 i1="03" i2="3" l="ENG"><s0>Epitaxial layers</s0></fC03><fC03 i1="04" i2="3" l="FRE"><s0>Gallium composé</s0></fC03><fC03 i1="04" i2="3" l="ENG"><s0>Gallium compounds</s0></fC03><fC03 i1="05" i2="3" l="FRE"><s0>Indium composé</s0></fC03><fC03 i1="05" i2="3" l="ENG"><s0>Indium compounds</s0></fC03><fC03 i1="06" i2="3" l="FRE"><s0>Phosphore composé</s0></fC03><fC03 i1="06" i2="3" l="ENG"><s0>Phosphorus compounds</s0></fC03><fC03 i1="07" i2="3" l="FRE"><s0>Dopage semiconducteur</s0></fC03><fC03 i1="07" i2="3" l="ENG"><s0>Semiconductor doping</s0></fC03><fC03 i1="08" i2="3" l="FRE"><s0>Tellure</s0><s2>NC</s2></fC03><fC03 i1="08" i2="3" l="ENG"><s0>Tellurium</s0><s2>NC</s2></fC03><fC03 i1="09" i2="3" l="FRE"><s0>Transformation ordre désordre</s0></fC03><fC03 i1="09" i2="3" l="ENG"><s0>Order-disorder transformations</s0></fC03><fC03 i1="10" i2="3" l="FRE"><s0>Joint antiphase</s0></fC03><fC03 i1="10" i2="3" l="ENG"><s0>Anti-phase boundaries</s0></fC03><fN21><s1>129</s1></fN21><fN47 i1="01" i2="1"><s0>0017M000233</s0></fN47></pA></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
EXPLOR_STEP=IndiumV3/Data/Main/Repository
HfdSelect -h $EXPLOR_STEP/biblio.hfd -nk 012427 | SxmlIndent | more
Ou
HfdSelect -h $EXPLOR_AREA/Data/Main/Repository/biblio.hfd -nk 012427 | SxmlIndent | more
Pour mettre un lien sur cette page dans le réseau Wicri
{{Explor lien
|wiki= *** parameter Area/wikiCode missing ***
|area= IndiumV3
|flux= Main
|étape= Repository
|type= RBID
|clé= Pascal:00-0179417
|texte= Effects of Te doping on ordering and antiphase boundaries in GaInP
}}
| This area was generated with Dilib version V0.5.77. |  |